bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2020-18-3-63-71bsuir-2670Research ArticleЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКАELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICSЛавинные светодиоды на основе наноструктурированного кремния для оптических межсоединенийAvalanche leds based on nanostructured silicon for optical interconnectionsВиЛе ДиньViLe Dinh

Аспирант кафедры микро- и наноэлектроники.

220013, Минск, ул. П. Бровки, 6.

Le Dinh Vi - PG student of Micro- and nanoelectronics Department of Belarusian State University of Informatics and Radioelectronics.

220013, Minsk, P. Brovka str., 6.

levi.ntv@gmail.comЛешокА. А.LeshokA. A.

Кандидат физико-математических наук, начальник Центра 4.11 НИЧ.

220013, Минск, ул. П. Бровки, 6.

Andrei A. Leshok - PhD, Head of Center 4.11 of Belarussian State University of Informatics and Radioelectronics.

220013, Minsk, P. Brovka str., 6.

ДолбикА. В.DolbikA. V.

Научный сотрудник НИЛ 4.12 НИЧ.

220013, Минск, ул. П. Бровки, 6.

Alexander V. Dolbik - Research Worker of laboratory 4.12 of R&D Department of Belarusian State University of Informatics and Radioelectronics.

220013, Minsk, P. Brovka str., 6.

ПеркоС. Л.PerkoS. L.

Аспирант кафедры микро- и наноэлектроники.

220013, Минск, ул. П. Бровки, 6.

Sergey L. Perko - PG student of Micro- and nanoelectronics Department of Belarusian State University of Informatics and Radioelectronics.

220013, Minsk, P. Brovka str., 6.

ЛазарукС. К.LazaroukS. K.

Доктор физико-математических наук, заведующий НИЛ 4.12 НИЧ.

220013, Минск, ул. П. Бровки, 6.

Sergey K. Lazarouk - DSci., Head of laboratory 4.12 of R&D Department of Belarusian State University of Informatics and Radioelectronics.

220013, Minsk, P. Brovka str., 6.

Белорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and Radioelectronics2020160520201836371Copyright © Ви Л.Д., Лешок А.А., Долбик А.В., Перко С.Л., Лазарук С.К., 20202020Ви Л.Д., Лешок А.А., Долбик А.В., Перко С.Л., Лазарук С.К.Vi L.D., Leshok A.A., Dolbik A.V., Perko S.L., Lazarouk S.K.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/2670

В работе проведен анализ параметров кремниевых лавинных светодиодов и их использования для электронно-оптических систем передачи сигналов. Показаны преимущества данных приборов, среди которых следует выделить высокое быстродействие и совместимость с кремниевой технологией. Изготовлены экспериментальные образцы лавинных светодиодов на основе наноструктурированного кремния и исследованы их структурные и оптические характеристики. Представлены результаты управления спектром электролюминесценции лавинных светодиодов за счет выбора технологических режимов формирования наноструктурированного кремния. Установлено, что температура подложки в процессе осаждения поверхностной нанокомпозитной пленки алюминий + кремний влияет на размеры формирующихся кремниевых наночастиц, определяющих спектральные характеристики лавинных светодиодов. Это позволяет смещать максимум спектра их излучения в более коротковолновую область видимого диапазона за счет формирования кремниевых наночастиц меньших размеров. Разработана система оптических межсоединений, состоящая из лавинных светодиодов на основе наноструктурированного кремния и микроканальной кремниевой пластины, используемой для передачи светового сигнала. Проведено исследование различных режимов функционирования разработанной оптоэлектронной системы и достигнуто увеличение эффективности оптопары на основе лавинных светодиодов до 0,2 % за счет импульсного режима функционирования. Показано, что эффективность оптопары увеличивается при увеличении тока светодиода, и именно импульсный режим его работы характеризуется максимальным значением тока, что обусловлено более эффективным отводом джоулевого тепла в промежутках между импульсами, обеспечивающим стабильную работу всей системы. Полученные результаты открывают новые возможности для развития оптических межсоединений между кремниевыми чипами и кремниевой оптоэлектроники в целом.

The paper analyzes the parameters of silicon avalanche LEDs and their use for electron-optical signal transmission systems. The advantages of silicon avalanche LEDs are shown, among which high speed and compatibility with silicon technology should be highlighted. Experimental avalanche LEDs based on nanostructured silicon were fabricated and studied. The results of controlling the electroluminescence spectrum of avalanche LEDs due to the choice of production conditions to form nanostructured silicon are presented. It was found that the temperature of the substrate during the deposition of the surface nanocomposite aluminum + silicon film affected the size of the formed silicon nanoparticles determining the spectral characteristics of avalanche LEDs. This allows shifting the maximum of their emission spectrum to a shorter wavelength region of the visible range due to the forming of smaller silicon nanoparticles. The authors have developed an optical interconnection system consisting of avalanche LEDs based on nanostructured silicon and a microchannel silicon wafer used to transmit a light signal. The study of various operating modes of the developed optoelectronic system was performed and an increase in the efficiency of optocouple based on avalanche LEDs to 0.2% due to the pulsed operating mode was achieved. It is shown that the efficiency of the optocouple increases with LED current and it is the pulsed mode of its operation that is characterized by the maximum current, which is due to more efficient removal of Joule heat in the intervals between pulses, ensuring stable operation of the entire system. The results obtained open up new opportunities for the development of optical interconnections between silicon chips and silicon optoelectronics in general.

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The authors declare that there are no conflicts of interest present.