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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2020-18-1-59-66</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-2593</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>ELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICS</subject></subj-group></article-categories><title-group><article-title>ВЛИЯНИЕ КРИСТАЛЛОГРАФИЧЕСКОЙ ОРИЕНТАЦИИ КРЕМНИЕВЫХ ПЛАСТИН НА МЕХАНИЗМ ИХ АНОДИРОВАНИЯ</article-title><trans-title-group xml:lang="en"><trans-title>INFLUENCE OF SILICON WAFER CRYSTALLOGRAPHIC ORIENTATION ON ANODIZATION MECHANISM</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гревцов</surname><given-names>Н. Л.</given-names></name><name name-style="western" xml:lang="en"><surname>Grevtsov</surname><given-names>N. L.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Гревцов Никита Леонидович, магистрант кафедры микро- и наноэлектроники</p><p>220013, г. Минск, ул. П. Бровки, 6, тел. +375 (17) 293-88-54</p></bio><bio xml:lang="en"><p>Grevtsov Nikita Leonidovich, Master Student of Micro- and Nanoelectronics Departament</p><p>220013, Minsk, P. Brovki str. 6, tel. +375 (17) 293-88-54</p></bio><email xlink:type="simple">hrautsou@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Клименко</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Klimenka</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>магистрант кафедры микро- и наноэлектроники</p></bio><bio xml:lang="en"><p>Master Student of Micro- and Nanoelectronics Departament</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гурбо</surname><given-names>А. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Hurbo</surname><given-names>A. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>магистрант кафедры микро- и наноэлектроники</p></bio><bio xml:lang="en"><p>Master Student of Micro- and Nanoelectronics Departament</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бондаренко</surname><given-names>В. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Bondarenko</surname><given-names>V. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>к.т.н., доцент, заведующий НИЛ 4.3 НИЧ</p></bio><bio xml:lang="en"><p>PhD, Associate Professor, Head of R&amp;D Laboratory 4.3</p></bio><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian State University of Informatics and Radioelectronics</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2020</year></pub-date><pub-date pub-type="epub"><day>06</day><month>03</month><year>2020</year></pub-date><volume>18</volume><issue>1</issue><fpage>59</fpage><lpage>66</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Гревцов Н.Л., Клименко А.В., Гурбо А.Д., Бондаренко В.П., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Гревцов Н.Л., Клименко А.В., Гурбо А.Д., Бондаренко В.П.</copyright-holder><copyright-holder xml:lang="en">Grevtsov N.L., Klimenka A.V., Hurbo A.D., Bondarenko V.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/2593">https://doklady.bsuir.by/jour/article/view/2593</self-uri><abstract><p>Проведено исследование влияния кристаллографической ориентации кремниевых пластин на процесс формирования слоев пористого кремния методом электрохимического анодирования во фтористоводородной кислоте. Анализ изображений сколов образцов с различной кристаллографической ориентацией, полученных методом сканирующей электронной микроскопии, показал, что поры в пористом кремнии на пластинах с ориентацией (111) имеют более разветвленный древообразный вид и большую пористость по сравнению с таковыми на пластинах с ориентацией (100). Данная особенность объясняется различиями в строении приповерхностного слоя кристалла и количестве связей Si-Si в разных направлениях. Так, у кристалла с ориентацией (100) каждый поверхностный атом кремния имеет две связи, соединяющие его с находящимися ниже атомами, а также две поверхностные оборванные связи, способные вступать во взаимодействие с ионами фтора. При анодировании путем инжекции электронов в кремний прикладывается энергия, достаточная для разрыва нижних связей с образованием SiF комплекса. Наличие двух связанных с поверхностным атомом кремния ионов фтора приводит к ослаблению связей поверхностного атома Si с нижерасположенными, делая разрыв связей Si-Si более энергетически выгодным. Для кристалла же с ориентацией (111) у атомов кремния присутствует только одна оборванная связь на поверхности, а для разрыва связей с нижерасположенными атомами кремния требуется бóльшая энергия активации в связи с их бóльшим количеством (три по сравнению с двумя для (100)). Заключено, что именно по данной причине травление подложек с ориентацией (111) происходит медленнее. Полученные результаты позволяют оценить влияние кристаллической структуры на процесс травления, в частности на его скорость и направление, что является особенно важным фактором при анодировании пластин с ориентацией (111).</p></abstract><trans-abstract xml:lang="en"><p>The influence of silicon wafer crystallographic orientation on the formation of porous silicon during anodization in an HF solution is studied. Cross-section SEM image comparison of samples with different crystallographic orientations has shown that (111) Si samples exhibit a more branching, tree-like pore structure with a higher porosity value compared to (100) Si samples. This phenomenon is explained by pointing out differences in crystal structure and numbers of Si-Si chemical bonds in different crystallographic directions. Namely, in (100)-oriented silicon crystals every surface Si atom has two bonds connecting it to atoms underneath it, as well as two broken bonds able to interact with Fions. Through electron injection into silicon, enough energy is applied to break the underlying bonds, forming SiF as a result. The presence of two Fions bonded with every surface silicon atom leads to weakening the bonds of surface silicon atoms with the underlying atoms, thus making the process of breaking the Si-Si bonds more energy efficient. As for (111)-oriented crystals, silicon atoms only have one broken surface bond, and breaking backbonds with underlying silicon atoms requires a higher value of activation energy due to their larger amount (three as opposed to two for (100) silicon). It is concluded that this very reason leads to slower etching speeds of (111)-oriented silicon wafers. The results help evaluate the way the silicon crystal structure affects the etching process, including its speed and direction, which is an especially important factor to consider when forming (111)-oriented porous silicon.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>кремниевые наноструктуры</kwd><kwd>пористый кремний</kwd><kwd>электрохимическое травление</kwd></kwd-group><kwd-group xml:lang="en"><kwd>silicon nanostructures</kwd><kwd>porous silicon</kwd><kwd>electrochemical etching</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Korotcenkov G. Porous Silicon: From Formation to Application: Formation and Properties, Volume One. New York: CRC Press; 2016.</mixed-citation><mixed-citation xml:lang="en">Korotcenkov G. Porous Silicon: From Formation to Application: Formation and Properties, Volume One. 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