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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.35596/1729-7648-2019-125-7-59-66</article-id><article-id custom-type="elpub" pub-id-type="custom">bsuir-2088</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>СЕКЦИЯ 3. СВЕТОИЗЛУЧАЮЩИЕ ПРИБОРЫ И СТРУКТУРЫ</subject></subj-group></article-categories><title-group><article-title>УСОВЕРШЕНСТВОВАННАЯ ТЕХНОЛОГИЯ ЛЮМИНОФОРНЫХ ЭКРАНОВ ДЛЯ ТВЕРДОТЕЛЬНЫХ РАДИОЛЮМИНЕСЦЕНТНЫХ ИСТОЧНИКОВ СВЕТА</article-title><trans-title-group xml:lang="en"><trans-title>ADVANCED TECHNOLOGY OF LUMINOPHOR SCREENS FOR SOLID RADIOLUMINESCENT LIGHT SOURCES</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Зеленина</surname><given-names>Е. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Zelenina</surname><given-names>E. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Зеленина Елена Владимировна, аспирант кафедры теоретических основ материаловедения, начальник отдела инновационного развития</p><p>190013, Российская Федерация, г. Санкт-Петербург, Московский проспект, д. 26</p><p>тел. 8-921-406-19-98</p></bio><bio xml:lang="en"><p>Zelenina Elena Vladimirovna, PG student of the Department of Theoretical Foundations of Materials Science, head of the Department of Innovative Development</p><p>190013, Russian Federation, Saint-Petersburg, Moskovsky av., 26</p><p>tel. 8-921-406-19-98</p></bio><email xlink:type="simple">elena.v.zelenina@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Печерцева</surname><given-names>Е. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Pechertseva</surname><given-names>E. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Студент кафедры радиационной технологии, инженер отделения технологии изотопов</p><p>190013, Российская Федерация, г. Санкт-Петербург, Московский проспект, д. 26</p><p>тел. 8-921-406-19-98</p></bio><bio xml:lang="en"><p>Student of the Department of Radiation Technology, engineer of the Department of Isotope Technology</p><p>190013, Russian Federation, Saint-Petersburg, Moskovsky av., 26</p><p>tel. 8-921-406-19-98</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бахметьев</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Bakhmetyev</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>К.х.н., заведующий лабораторией, доцент кафедры теоретических основ материаловедения</p><p>190013, Российская Федерация, г. Санкт-Петербург, Московский проспект, д. 26</p><p>тел. 8-921-406-19-98</p></bio><bio xml:lang="en"><p>Ph.D., head of Laboratory, Associate Professor, Department of Theoretical Foundations of Materials Science</p><p>190013, Russian Federation, Saint-Petersburg, Moskovsky av., 26</p><p>tel. 8-921-406-19-98</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сычев</surname><given-names>М. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Sychov</surname><given-names>M. M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Д.т.н., заведующий кафедрой, профессор кафедры теоретических основ материаловедения</p><p>190013, Российская Федерация, г. Санкт-Петербург, Московский проспект, д. 26</p><p>тел. 8-921-406-19-98</p></bio><bio xml:lang="en"><p>D.Sci, head of Department, Professor, Department of Theoretical Foundations of Materials Science</p><p>190013, Russian Federation, Saint-Petersburg, Moskovsky av., 26</p><p>tel. 8-921-406-19-98</p></bio><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный технологический институт (технический университет); АО «Радиевый институт им. В.Г. Хлопина»</institution></aff><aff xml:lang="en"><institution>Saint-Petersburg State Institute of Technology, Material Science Department; Khlopin Radium Institute</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Санкт-Петербургский государственный технологический институт (технический университет)</institution></aff><aff xml:lang="en"><institution>Saint-Petersburg State Institute of Technology, Material Science Department</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2019</year></pub-date><pub-date pub-type="epub"><day>06</day><month>12</month><year>2019</year></pub-date><volume>0</volume><issue>7 (125)</issue><issue-title>Спецвыпуск</issue-title><fpage>59</fpage><lpage>66</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Зеленина Е.В., Печерцева Е.А., Бахметьев В.В., Сычев М.М., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Зеленина Е.В., Печерцева Е.А., Бахметьев В.В., Сычев М.М.</copyright-holder><copyright-holder xml:lang="en">Zelenina E.V., Pechertseva E.A., Bakhmetyev V.V., Sychov M.M.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/2088">https://doklady.bsuir.by/jour/article/view/2088</self-uri><abstract><p>В статье представлена разработка технологии нанесения люминофорных покрытий регулируемой толщины с целью создания твердотельных радиолюминесцентных источников света (ТРИС). Технология ТРИС является альтернативой существующей в настоящее время технологии газонаполненных радиолюминесцентных источников света. Ключевая идея состоит в связывании целевого радионуклида в твердотельной матрице и совмещении ее с люминофором. Вследствие малой длины пробега бета-частиц трития в твердой матрице, технология люминофорных покрытий должна обеспечивать как можно более тесный контакт между люминофором и тритиевым бета-источником. Основными требованиями к люминофорным покрытиям в контексте создания ТРИС являются: прочность закрепления на подложке, равномерность нанесения, радиационная и температурная стойкость. Проведено сравнение различных способов нанесения люминофорных покрытий по их влиянию на рабочие характеристики (яркость и интенсивность) ТРИС. Разработана модифицированная методика осаждения люминофорного покрытия из суспензии в растворе жидкого калиевого стекла на основе золь-гель процесса. Экспериментальным путем установлен оптимальный состав раствора и получены образцы люминофорных покрытий различной толщины на стеклянных подложках. Толщина покрытия регулировалась массой люминофора в суспензии. Представленная методика позволяет осаждать равномерные люминофорные покрытия из суспензии без использования диспергаторов. Была определена оптимальная толщина люминофорного покрытия для достижания максимальной яркости в ТРИС, после чего были изготовлены экспериментальные образцы ТРИС с осаждением люминофорного экрана непосредственно на тритиевый бета-источник. Показано, что предлагаемая технология позволяет получить прочные и равномерные люминофорные покрытия и усовершенствовать технологию ТРИС.</p></abstract><trans-abstract xml:lang="en"><p>The article observes different methods of coating the phosphor screens on the tritiated titanium matrices for creating the solid-state radioluminescent light sources (SRLS). Technology of SRLS is alternative to the existing technology of the gas-filled radioluminescent light sources. The main idea of SRLS is in bonding the working isotope (tritium) in the solid matrix and combining it with the phosphor. The key problem of SRLS is to provide the closest contact between the tritiated carrier matrix and phosphor screen. The basic requirements for the phosphor screens for SRLS would be the strength of fixation on the plate, uniformity and radiological and thermal stability. There have been made a comparison of various techniques of coating and fixing the phosphor screens by their effect on spectral and brightness characteristics of SRLS. The improved sol-gel technique of suspended sedimentation of phosphor screen from the potassium water glass binder solution was developed. The composition of the solution was established experimentally and we get the strong and uniform experimental prototypes of the glass coated phosphor screens of various thickness. The developed technology allows to deposit the strong and uniform phosphor coatings without using any additional dispersing agents. Screen thickness regulates by the amount of phosphor in the suspension. Also the optimal thickness of the phosphor screen, giving the maximum luminescence intensity was determined. The two laboratory prototypes of solid-state radioluminescent light sources were manufactured by coating the phosphor directly on the tritium β-source.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>радиолюминесцентные источники света</kwd><kwd>радиолюминесценция</kwd><kwd>тритий</kwd><kwd>цинксульфидные люминофоры</kwd><kwd>радиолюминофоры</kwd><kwd>катодолюминофоры</kwd><kwd>золь-гель метод</kwd><kwd>люминофорные покрытия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>radioluminescent light sources</kwd><kwd>radioluminescence</kwd><kwd>tritium</kwd><kwd>zinc-sulphide</kwd><kwd>radiophosphors</kwd><kwd>cathodophosphors</kwd><kwd>sol-gel method</kwd><kwd>phosphor coating</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Ellefson R.E. High pressure bulk-phosphor tritium lamps. Technology transfer conference procceedings, 1990, U. S. 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