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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">bsuir-199</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>КОНСТРУКТИВНО-ТЕХНОЛОГИЧЕСКОЕ УСОВЕРШЕНСТВОВАНИЕ ДИОДОВ ШОТТКИ С МОП КАНАВОЧНОЙ СТРУКТУРОЙ</article-title><trans-title-group xml:lang="en"><trans-title>STRUCTURE AND techological improvments of tmbs diodes</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Котов</surname><given-names>В. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Kotov</surname><given-names>V. S.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Голубев</surname><given-names>Н. Ф.</given-names></name><name name-style="western" xml:lang="en"><surname>Golubev</surname><given-names>N. F.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Борисенко</surname><given-names>В. Е.</given-names></name><name name-style="western" xml:lang="en"><surname>Borisenko</surname><given-names>V. E.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff xml:lang="ru" id="aff-1"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution><country>Belarus</country></aff><pub-date pub-type="collection"><year>2013</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2019</year></pub-date><volume>0</volume><issue>5</issue><fpage>12</fpage><lpage>16</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Котов В.С., Голубев Н.Ф., Борисенко В.Е., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Котов В.С., Голубев Н.Ф., Борисенко В.Е.</copyright-holder><copyright-holder xml:lang="en">Kotov V.S., Golubev N.F., Borisenko V.E.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/199">https://doklady.bsuir.by/jour/article/view/199</self-uri><abstract><p>Проведено 2D-моделирование и экспериментальное исследование усовершенствованной конструкции и технологии изготовления диодов Шоттки с металл-окисел-полупроводник (МОП) канавочной структурой на кремнии, позволивших упростить технологический процесс на одну фотолитографию и улучшить параметры диодов.</p></abstract><trans-abstract xml:lang="en"><p>An improved structure and technological process of trench MOS barrier Schottky (TMBS) diodes are developed and studied by 2D-simulation. The experiments performed demonstrated simplification of the technology by elimination of one photolithography and improvement of the diode parameters.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>диод</kwd><kwd>проектирование</kwd><kwd>технология</kwd><kwd>МОП структура</kwd><kwd>пробивное напряжение</kwd><kwd>ток утечки</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Max Chen, Henry Kuo, Sweetman Kim // Power Electronics Technology. 2006. P.22-32.</mixed-citation><mixed-citation xml:lang="en">Max Chen, Henry Kuo, Sweetman Kim // Power Electronics Technology. 2006. P.22-32.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Davide Chiola, Marina del Rey. Recessed termination for trench Schottky device without junction curvature / Патент США №7466005 B2</mixed-citation><mixed-citation xml:lang="en">Davide Chiola, Marina del Rey. Recessed termination for trench Schottky device without junction curvature / Патент США №7466005 B2</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Н. Голубев, В. Токарев, С. Шпаковский // Силовая электроника. 2005. №3. С. 30-33</mixed-citation><mixed-citation xml:lang="en">Н. Голубев, В. Токарев, С. Шпаковский // Силовая электроника. 2005. №3. С. 30-33</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
