bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИР10.35596/1729-7648-2019-123-5-87-93bsuir-1156Research ArticleЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКАELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICSФормирование пленок оксида титана методом реактивного магнетронного распыленияFormation of titanium oxide thin films by reactive magnetron sputteringВильяН.VillaN.

Вилья Номар – аспирант.

220013, Минск, ул. П. Бровки 6, тел. +375-17-293-80-79

Villa Nomar  - PG student of Belarusian state university of informatics and radioelectronics.

220013, Minsk, P. Brovki st., 6, tel. +375-17-293-80-79

dmgolosov@mail.ruГолосовД. А.GolosovD. A.

Кандидат технических наук, доцент, ведущий научный сотрудник Центра 9.1.

220013, Минск, ул. П. Бровки 6

PhD, associate professor, senior researcher of Center 9.1 of Belarusian state university of informatics and radioelectronics.

220013, Minsk, P. Brovki st., 6

НгуенТ. Д.NguyenT. D.

Аспирант.

220013, Минск, ул. П. Бровки 6

PG student of Belarusian state university of informatics and radioelectronics.

220013, Minsk, P. Brovki st., 6

Белорусский государственный университет информатики и радиоэлектроникиBelarusian state university of informatics and radioelectronics201903072019058793Copyright © Вилья Н., Голосов Д.А., Нгуен Т.Д., 20192019Вилья Н., Голосов Д.А., Нгуен Т.Д.Villa N., Golosov D.A., Nguyen T.D.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/1156

В статье представлены результаты исследований диэлектрических характеристик пленок оксида титана, нанесенных методом реактивного магнетронного распыления Ti мишени в Ar/O2 смеси газов. Установлены зависимости диэлектрической проницаемости, тангенса угла диэлектрических потерь, ширины запрещенной зоны, плотности токов утечки от содержания кислорода в Ar/O2 смеси газов в процессе нанесения пленок. Получены пленки с диэлектрической проницаемостью 20-30 единиц, тангенсом угла диэлектрических потерь 0,02, шириной запрещенной зоны 3,82 эВ и плотностью токов утечки при напряженности электрического поля 2,0*106 В/см менее 1,0 А/см2.

The article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O2 gas mixture during film deposition were established. Films with a dielectric constant of 20-30 units, a dielectric loss tangent of 0,02, a band gap of 3,82 eV, a leakage current density of less than 1,0 A/cm2 at an electric field strength of 2,0*106 V/cm, were obtained.

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The authors declare that there are no conflicts of interest present.