bsuirДоклады БГУИРDoklady BGUIR1729-76482708-0382БГУИРbsuir-1120Research ArticleЭЛЕКТРОНИКА, РАДИОФИЗИКА, РАДИОТЕХНИКА, ИНФОРМАТИКАELECTRONICS, RADIOPHYSICS, RADIOENGINEERING, INFORMATICSВЛИЯНИЕ РЕЖИМОВ ФОРМИРОВАНИЯ СИЛИЦИДА ПЛАТИНЫ МЕТОДОМ БЫСТРОЙ ТЕРМООБРАБОТКИ НА ПАРАМЕТРЫ ДИОДОВ ШОТТКИThe impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parametersСолодухаВ. А.SaladukhaV. A.ПилипенкоВ. А.PilipenkoV. A.

Пилипенко Владимир Александрович - д.т.н., профессор, членкорреспондент НАН Беларуси, заместитель директора по научному развитию ГЦ «Белмикроанализ»

220108, г. Минск, ул. Казинца, 121А

тел. +375-17-212-37-41

Pilipenka Uladzimir Aleksandrovich - D.Sci, professor, corresponding member of the National academy of sciences of Belarus, deputy director of science development of state center «Belmicroanalysis»

220108, Minsk, Kazintsa st., 121A

tel. +375-17-212-37-41

office@bms.byГорушкоВ. А.GorushkoV. A.

leading engineer of state center «Belmicroanalysis»

ФилипеняВ. А.PhilipenyaV. A.Открытое акционерное общество «ИНТЕГРАЛ» − управляющая компания холдинга «ИНТЕГРАЛ»JSC «INTEGRAL» – holding managing company «INTEGRAL»201905062019016267Copyright © Солодуха В.А., Пилипенко В.А., Горушко В.А., Филипеня В.А., 20192019Солодуха В.А., Пилипенко В.А., Горушко В.А., Филипеня В.А.Saladukha V.A., Pilipenko V.A., Gorushko V.A., Philipenya V.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.bsuir.by/jour/article/view/1120

Приведены результаты исследования влияния режимов формирования силицида платины с применением быстрой термической обработки на электорофизические параметры диодов Шоттки. Показано, что данная обработка, по сравнению с традиционной, позволяет за счет уменьшения микрорельефа границы раздела PtSi–Si, а также получения в результате обработки менее дефектной и равновесной структуры барьерного слоя повысить высоту барьера с 0,804 до 0,825 В, снизить ток утечки с –4,42·10-6 до –2,85·10-6 А и в 1,25 раза повысить надежность диодов Шоттки при температуре эксплуатации 125 °С.

The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented. It is shown that this treatment, as compared to the traditional one, allows at the cost of reducing of microrelief of boundary of PtSi–Si, and also obtaining as a result of treatment a less defective and equilibrium structure of the barrier layer, to raise barrier height from 0,804 to 0,825 V, to reduce leakage current from –4,42·10-6 to –2,85·10-6 A and in 1,25 times and to raise the reliability of Schottky diodes at operating temperature 125 °C.

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The authors declare that there are no conflicts of interest present.