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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">bsuir</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады БГУИР</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady BGUIR</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7648</issn><issn pub-type="epub">2708-0382</issn><publisher><publisher-name>БГУИР</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">bsuir-1075</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>ЭФФЕКТЫ ПЕРЕКЛЮЧЕНИЯ И ПАМЯТИ В ТОНКОПЛЕНОЧНЫХ НЕУПОРЯДОЧЕННЫХ ХАЛЬКОГЕНИДНЫХ ПОЛУПРОВОДНИКАХ</article-title><trans-title-group xml:lang="en"><trans-title>Switching and memory effects in thin film disoder chalcoginide semiconductors</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Колосницын</surname><given-names>Б. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Kolosnitcin</surname><given-names>B. S.</given-names></name></name-alternatives><email xlink:type="simple">noemail@neicon.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Троян</surname><given-names>Е. Ф.</given-names></name><name name-style="western" xml:lang="en"><surname>Troyan</surname><given-names>E. F.</given-names></name></name-alternatives><email xlink:type="simple">troevfe@gvail.com</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Белорусский государственный университет информатики и радиоэлектроники</institution></aff><aff xml:lang="en"><institution>Belarusian state university of informatics and radioelectronics</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Новые европейские инновационные технологии</institution></aff><aff xml:lang="en"><institution>CJSC «New european innovative technologies»</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2017</year></pub-date><pub-date pub-type="epub"><day>03</day><month>06</month><year>2019</year></pub-date><volume>0</volume><issue>2</issue><fpage>25</fpage><lpage>30</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Колосницын Б.С., Троян Е.Ф., 2019</copyright-statement><copyright-year>2019</copyright-year><copyright-holder xml:lang="ru">Колосницын Б.С., Троян Е.Ф.</copyright-holder><copyright-holder xml:lang="en">Kolosnitcin B.S., Troyan E.F.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.bsuir.by/jour/article/view/1075">https://doklady.bsuir.by/jour/article/view/1075</self-uri><abstract><p>В предлагаемой статье анализируется возможность создания тонкопленочных элементов памяти и порогового переключения на основе одного халькогена-теллура.</p></abstract><trans-abstract xml:lang="en"><p>The possibility of creation of thin film memory elements and threshold switching elements on the base of one chalcogenide - tellurium is analyzed in the proposed article.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>тонкие пленки</kwd><kwd>халькогенидные соединения</kwd><kwd>эффекты переключения и памяти</kwd></kwd-group><kwd-group xml:lang="en"><kwd>thin films</kwd><kwd>chalcogenide alloys</kwd><kwd>switching and memory effects</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Троян Е.Ф., Колосницын Б.С., Данько В.Н. 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